首页> 外国专利> V-SHAPED GROOVE STRUCTURE OF SILICA HYBRID PLATFORM FOR PREVENTING GENERATION OF UNDER-CUT PHENOMENON BY FORMING ETCHING MASK HAVING MINIMUM LINE WIDTH BETWEEN V-SHAPED GROOVE AND AUXILIARY V-SHAPED GROOVE

V-SHAPED GROOVE STRUCTURE OF SILICA HYBRID PLATFORM FOR PREVENTING GENERATION OF UNDER-CUT PHENOMENON BY FORMING ETCHING MASK HAVING MINIMUM LINE WIDTH BETWEEN V-SHAPED GROOVE AND AUXILIARY V-SHAPED GROOVE

机译:通过形成具有最小V形沟槽和辅助V形沟槽之间的线宽的刻蚀面来防止切割现象产生的硅混合平台的V形沟槽结构

摘要

PURPOSE: A V-shaped groove structure of a silica hybrid platform is provided to remove an undercut phenomenon which obstructs an optical fiber packaging by separating an etching mask based on a minimum line width between the V-shaped groove and an auxiliary V-shaped groove. CONSTITUTION: A hybrid platform(10) includes a V-shaped groove(20) for connecting an optical waveguide(11) to an optical fiber. The V-shaped groove corresponds to the optical waveguide. An auxiliary V-shaped grooves(30,31) are formed in a predetermined interval on both sides of the V-shaped groove. An etching mask is easily separated in a final process by a minimum line width between the V-shaped groove and the auxiliary V-shaped grooves. A depth and a line width of the auxiliary V-shaped grooves are smaller than a depth and a line width of the V-shaped groove.
机译:用途:提供一种二氧化硅混合平台的V形凹槽结构,以通过基于V形凹槽和辅助V形凹槽之间的最小线宽分离蚀刻掩模来消除妨碍光纤封装的底切现象。 。组成:一种混合平台(10),包括一个V形凹槽(20),用于将光波导(11)连接到光纤上。 V形槽对应于光波导。在V形槽的两侧以预定间隔形成有辅助V形槽(30,31)。在最后的过程中,蚀刻掩模容易通过V形凹槽和辅助V形凹槽之间的最小线宽分开。辅助V形槽的深度和线宽小于V形槽的深度和线宽。

著录项

  • 公开/公告号KR20050015517A

    专利类型

  • 公开/公告日2005-02-21

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20030054373

  • 发明设计人 JUNG SUN TAE;KOO JUN MO;

    申请日2003-08-06

  • 分类号G02B6/40;

  • 国家 KR

  • 入库时间 2022-08-21 22:05:49

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