PURPOSE: A photoelectric transformation device is provided to improve a detection characteristic and a S/N(signal-to-noise) ratio by controlling dark current caused by an interface level even when a roughness part is installed. CONSTITUTION: A photoelectric transformation part(3) is formed on the surface of a substrate(1). An insulation layer(11) is formed on the substrate. A roughness part(18) of a roughness type is formed in at least a part of the interface between the substrate of the photoelectric transformation part and the insulation layer. A recombination region(19) for reducing dark current is formed to include at least a part of the roughness part in the photoelectric transformation part.
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