首页> 外国专利> PHOTOELECTRIC TRANSFORMATION DEVICE, DRIVING METHOD THEREOF, FABRICATING METHOD THEREOF, SOLID STATE IMAGE PICK-UP DEVICE, DRIVING METHOD THEREOF AND FABRICATING METHOD THEREOF TO IMPROVE DETECTION CHARACTERISTIC AND S/N RATIO

PHOTOELECTRIC TRANSFORMATION DEVICE, DRIVING METHOD THEREOF, FABRICATING METHOD THEREOF, SOLID STATE IMAGE PICK-UP DEVICE, DRIVING METHOD THEREOF AND FABRICATING METHOD THEREOF TO IMPROVE DETECTION CHARACTERISTIC AND S/N RATIO

机译:光电变换装置,其驱动方法,制造方法,固态图像拾取装置,其驱动方法和制造方法以改善检测特性和S / N比

摘要

PURPOSE: A photoelectric transformation device is provided to improve a detection characteristic and a S/N(signal-to-noise) ratio by controlling dark current caused by an interface level even when a roughness part is installed. CONSTITUTION: A photoelectric transformation part(3) is formed on the surface of a substrate(1). An insulation layer(11) is formed on the substrate. A roughness part(18) of a roughness type is formed in at least a part of the interface between the substrate of the photoelectric transformation part and the insulation layer. A recombination region(19) for reducing dark current is formed to include at least a part of the roughness part in the photoelectric transformation part.
机译:用途:提供一种光电转换装置,即使在安装了粗糙部分的情况下,也可以通过控制由界面能级引起的暗电流来提高检测特性和信噪比(S / N)。组成:一个光电转换部分(3)形成在基板(1)的表面。在基板上形成绝缘层(11)。在光电转换部的基板与绝缘层之间的界面的至少一部分中形成有粗糙型的粗糙部(18)。用于减小暗电流的重组区域(19)形成为包括光电转换部分中的粗糙度部分的至少一部分。

著录项

  • 公开/公告号KR20050020633A

    专利类型

  • 公开/公告日2005-03-04

    原文格式PDF

  • 申请/专利权人 SONY CORPORATION;

    申请/专利号KR20040064410

  • 发明设计人 MURAKAMI ICHIRO;

    申请日2004-08-16

  • 分类号H01L27/146;H01L31/10;

  • 国家 KR

  • 入库时间 2022-08-21 22:05:48

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