BIT LINE SENSE AMPLIFIER OF SEMICONDUCTOR MEMORY DEVICE FOR IMPROVING PRECHARGE OPERATION WITH REDUCED PRECHARGING TIME BY HAVING SWITCHING CIRCUIT BETWEEN BIT LINES

摘要

Purpose: semiconductor storage device a little is arranged to improve increase of the precharge operation without precharge time in middle low voltage operating by between bit lines or a charging circuit, being used to provide tertiary voltage to bit lines including switching circuit with line sensing amplifier. Construction: semiconductor storage device includes some a switching circuit (260) with line sensing amplifier, is used to be electrically connected a node (BLB00) of the node (BL00) to some lines of demarcation of a dotted line; One charging circuit (370) is used to provide the tertiary voltage (VBL) to the node (BL00) of a dotted line and a node (BLB00) in some lines of demarcation. The precharge time of the node (BL00) of one dotted line and a node (BLB00) in some lines of demarcation do not influence the unscrewing resistance of a metal oxide semiconductor transistor of a discrete circuit (130L), by connection switch circuit (260) to charging circuit (370).