NONVOLATILE FERROELECTRIC MEMORY DEVICE USING PREDETERMINED TEST SIGNAL ALONE TO TEST SIMULTANEOUSLY TWO OR MORE CELL ARRAY BLOCKS WITHOUT ADDITIONAL MODIFICATION OF CELL ARRAY STRUCTURE AND TEST METHOD THEREOF

摘要

PURPOSE: A nonvolatile ferroelectric memory device and a test method thereof are provided to test simultaneously two or more cell array blocks as well as a single cell array block of a 1T1C structure by controlling a test signal alone without an additional modification of a cell array structure. CONSTITUTION: A nonvolatile ferroelectric memory device includes a plurality of cell array blocks, a common data bus unit for transferring a sensing voltage of each cell array block, a sense amp unit(10) for comparing the sensing voltage with a reference voltage and outputting the result, a reference voltage control unit(20) for controlling the reference voltage according to a test mode control signal and outputting the controlled reference voltage to the sense amp unit, and a column select control unit. The column select control unit(30) is used for selecting aiming cell array blocks according to the test mode control signal and outputting simultaneously sensing voltages of the selected cell array blocks to the common data bus unit.