首页> 外国专利> THIN FILM TRANSISTORS COUPLED IN SERIES VIA SEMICONDUCTOR LAYER HAVING PREDETERMINED RESISTANCE, ACTIVE MATRIX OLED USING THE SAME, AND MANUFACTURING METHOD OF THE ACTIVE MATRIX OLED

THIN FILM TRANSISTORS COUPLED IN SERIES VIA SEMICONDUCTOR LAYER HAVING PREDETERMINED RESISTANCE, ACTIVE MATRIX OLED USING THE SAME, AND MANUFACTURING METHOD OF THE ACTIVE MATRIX OLED

机译:具有预定电阻的半导体层中耦合的薄膜晶体管,使用相同电阻的有源矩阵OLED以及有源矩阵OLED的制造方法

摘要

Series thin film transistor, and active matrix organic electroluminescent device and the manufacturing method using the active matrix organic light-emitting device are provided. Tandem thin-film transistor has the second main part, and there is the first channel region and the first main part, first main part have positioned at its two sides the first source/drain region, second channel region and the second source/drain region, positioned at its two sides, first source/drain region and the second source/drain region is located between the drain region of the first main part and the drain region of the second main part of series connection, and first source electrode/drain region, the second source electrode of wherein at least one/drain region includes semiconductor layer, the semiconductor layer is with different coupling parts and conductive type. The first grid of the first channel region on the semiconductor layer. On floor identical with first grid, second grid is positioned transverse to the second channel region. Therefore, in the series for implementing thin film transistor (TFT), it is the limitation in design rule using the series thin film transistor that the connection by using the semiconductor layer resistance with predetermined resistance, which carrys out impurity, to alleviate the production of organic electroluminescent. The increase of aperture ratio may be implemented in scented device.
机译:提供了串联薄膜晶体管和有源矩阵有机电致发光器件以及使用该有源矩阵有机电致发光器件的制造方法。串联薄膜晶体管具有第二主要部分,并且具有第一沟道区域和第一主要部分,第一主要部分在其两侧定位有第一源极/漏极区域,第二沟道区域和第二源极/漏极区域。在其两侧,第一源极/漏极区和第二源极/漏极区位于串联连接的第一主要部分的漏极区和第二主要部分的漏极区与第一源极/漏极区之间,其中,第二源电极中的至少一个/漏极区域包括半导体层,所述半导体层具有不同的耦合部分和导电类型。半导体层上的第一沟道区的第一栅极。在与第一格栅相同的地板上,第二格栅横向于第二通道区域定位。因此,在用于实现薄膜晶体管(TFT)的系列中,使用该系列薄膜晶体管的设计规则的局限在于,通过使用具有预定电阻的半导体层电阻来进行连接来进行杂质的连接,从而减轻了制造成本。有机电致发光。开口率的增加可以在香味装置中实现。

著录项

  • 公开/公告号KR20050024594A

    专利类型

  • 公开/公告日2005-03-10

    原文格式PDF

  • 申请/专利权人 SAMSUNG SDI CO. LTD.;

    申请/专利号KR20030061587

  • 发明设计人 KWAK WON KYU;

    申请日2003-09-03

  • 分类号H05B33/00;

  • 国家 KR

  • 入库时间 2022-08-21 22:05:44

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