METHOD FOR IMPROVING PHOTOLUMINESCENE OF ZNO THIN FILMS BY A LOW ENERGY ION BEAM SURFACE TREATMENT

摘要

It discloses a method for pre-processing of the sapphire substrate and the zinc oxide thin film deposition method using the same. The present invention of an interface for generating a sapphire substrate is irradiated with a low energy nitrogen ion of about 150~200eV as to form at room temperature, the AlN and AlON bonded to a sapphire heat treated zinc surface without the film lattice mismatch with the sapphire substrate during the growth in accordance with the oxide ion dose It characterized in that to relieve the strain (strain). According to the invention, to completely remove the green light emission caused by this lattice mismatch defects may improve the light emission characteristics caused by the energy gap in the ultraviolet region may contribute to the improved quality when production part next optoelectronic (optoelectric) and extended life .