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DEVELOPMENT METHOD OF PHOTO-LITHOGRAPHY

机译:摄影光刻技术的发展方法

摘要

The present invention relates to a developing method of a photolithography step for developing the photoresist on the semiconductor substrate subjected to the exposure process.; The developing method of a photolithography process according to the invention To this end, the step of rotating the substrate subjected to the coating and exposure process of (a) a photoresist; (B) the step of spraying the developing solution on the substrate in a state in which the substrate is rotated; And (c) allowed to stand for a certain period of time the substrate to a no-load condition; (D) injecting the cleaning solution with the substrate in the no-load condition, primarily for a certain period of time; (E) the step of rotating for a predetermined time to the substrate injecting a cleaning solution to the substrate secondarily; And (f) a step of drying a cleaning solution for a predetermined time while rotating the substrate.
机译:光刻步骤的显影方法技术领域本发明涉及一种光刻步骤的显影方法,该光刻步骤用于在经受曝光工艺的半导体基板上显影光刻胶。为此目的,本发明的光刻方法的显影方法是,使经受(a)光致抗蚀剂的涂覆和曝光过程的基板旋转的步骤; (B)在使基板旋转的状态下将显影液喷雾到基板上的工序。 (c)允许基板在一定时间内静置至空载状态; (D)在一定时间段内,在空载条件下向基板注入清洗液; (E)对基板旋转预定时间的步骤,其次将清洁溶液注入基板; (f)在旋转基板的同时将清洗液干燥预定时间的步骤。

著录项

  • 公开/公告号KR20050066604A

    专利类型

  • 公开/公告日2005-06-30

    原文格式PDF

  • 申请/专利权人 DONGBU ELECTRONICS CO. LTD.;

    申请/专利号KR20030097912

  • 发明设计人 HONG CHANG YOUNG;

    申请日2003-12-26

  • 分类号H01L21/027;

  • 国家 KR

  • 入库时间 2022-08-21 22:05:01

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