首页> 外国专利> METHOD OF PREDICTING AND MINIMIZING MODEL OPC DEVIATION DUE TO MIX/MATCH OF EXPOSURE TOOLS USING A CALIBRATED EIGEN DECOMPOSITION MODEL

METHOD OF PREDICTING AND MINIMIZING MODEL OPC DEVIATION DUE TO MIX/MATCH OF EXPOSURE TOOLS USING A CALIBRATED EIGEN DECOMPOSITION MODEL

机译:使用校正的本征分解模型预测和最小化模型的OPC偏差,因为混合/混合的曝光工具

摘要

A method for generating models for simulating the imaging performance of a plurality of exposure tools. The method includes the steps of: generating a calibrated model for a first exposure tool capable of estimating an image to be produced by the first exposure tool for a given photolithography process, where the calibrated model includes a first set of basis functions; generating a model of a second exposure tool capable of estimating an image to be produced by the second exposure tool for the photolithography process, where the model includes a second set of basis functions; and representing the second set of basis functions as a linear combination of the first set of basis functions so as to generate an equivalent model function corresponding to the second exposure tool, where the equivalent model function produces a simulated image corresponding to the image generated by the second exposure tool for the photolithography process.
机译:一种用于生成用于模拟多个曝光工具的成像性能的模型的方法。该方法包括以下步骤:为第一曝光工具生成校准模型,该校准模型能够针对给定的光刻工艺估计将由第一曝光工具产生的图像,其中该校准模型包括第一组基础函数;以及产生第二曝光工具的模型,该模型能够估计由第二曝光工具产生的用于光刻工艺的图像,其中该模型包括第二组基础函数;将第二组基本函数表示为第一组基本函数的线性组合,以生成与第二曝光工具相对应的等效模型函数,其中,等效模型函数生成与由第二曝光工具生成的图像相对应的模拟图像。用于光刻工艺的第二种曝光工具。

著录项

  • 公开/公告号KR20050078234A

    专利类型

  • 公开/公告日2005-08-04

    原文格式PDF

  • 申请/专利权人 ASML MASKTOOLS B.V.;

    申请/专利号KR20050008040

  • 发明设计人 SHI XUELONG;CHEN JANG FUNG;

    申请日2005-01-28

  • 分类号H01L21/027;G03F7/20;

  • 国家 KR

  • 入库时间 2022-08-21 22:04:48

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