METHOD FOR DEPOSITING RUO2 COMPRISING ECR PLASMA PRETREATMENT ON THE SURFACE OF TIN SURFACE

摘要

The present invention relates to a RuO ₂ deposition methods, including ECR plasma pretreatment of the surface of the TiN film, specifically, RuO ₂ deposition by step, the method and the MOCVD method on the TiN film to a chemical pre-treatment the TiN film coated film TiN on the Si wafer in the deposition method of the RuO ₂ consisting of steps, the evaporation method of RuO _2, characterized in that it comprises a step of cleaning a TiN film by performing the chemical pre-treatment stage with hydrogen or argon ECR plasma pre-treatment in between the deposition steps of the RuO ₂ It relates.; Deposition of RuO ₂ by a MOCVD method of the invention is the evaporation of RuO ₂ may by carried out with ECR plasma pretreatment on the surface of the TiN film, removing the oxygen and nitrogen atoms in the TiN film surface, through this removal RuO ₂ nuclear It can further improve the production.