METHOD FOR FORMING A SELF ALIGNED SILICIDE CONTACT HOLE

摘要

PURPOSE: A method for forming a self-aligned salicide contact hole of a semiconductor device is provided to prevent short between a gate and a source/drain by using different etch selectivity of a nitride spacer and a PMD oxide layer. CONSTITUTION: A gate including the first polysilicon layer(304), an oxide layer and the second polysilicon layer is formed on a substrate. The first nitride spacer(314) is formed at both sidewalls of the gate. The second polysilicon layer is etched by using the oxide layer as an etch stopper. The oxide layer is removed, and a silicide layer(316) is formed on a source/drain region and the gate polysilicon layer by salicide processing. The second nitride spacer(318) is formed at both sidewalls of the first nitride spacer. Then, a PMD(Polysilicon to Metal Dielectric) oxide layer(320) is formed on the resultant structure. A contact hole(322) is then formed.