A method for fabricating a semiconductor device using a molybdenum or molybdenum alloy

摘要

SUMMARY A method of manufacturing a wiring using molybdenum or a molybdenum alloy and a method of manufacturing a thin film transistor using the same, chromium, molybdenum or molybdenum displayed using a single film or a dual film consisting of a combination of an alloy system, in particular data of the liquid crystal display device to form a line, the source / drain electrodes. At this time, the use of CF ₄ + HCl in the case of dry-etching the doped amorphous silicon layer and a source / drain electrode as a mask. Using this gas Mo-W alloy layer reduces the amount of etching ratio is not more than 100 Å / min to be etched. Applying these ashing process (ashing) process is not required, and hydrogen (H ₂₎ plasma process for stabilizing the surface of the amorphous silicon can be selectively added.