A graphite crucible and a quartz crucible of a grower for single crystalline silicon

摘要

The present invention relates to a graphite crucible and a quartz crucible provided in the silicon single crystal growing apparatus.; Graphite crucible and a quartz crucible of the present inventors the silicon single crystal growth apparatus for this purpose is said to form a straight wall portion, and is characterized by formed portion curved bottom formed to a radius of curvature, at this time, the curved bottom portion of the graphite crucible and the quartz crucible. focus (F) of the curvature radius (R) is preferably formed to higher than or equal to the lower end (a) of the straight side wall.; In particular, and a heat shield provided in the silicon single crystal growth apparatus, it is more preferably formed so as to focus (F) of the curvature radius (R) of forming curved bottom portion of the graphite crucible is lower than or equal to the lower end of the heat shield.