Meteorological thin film growth apparatus and meteorological thin film growth method

摘要

The present invention provides a plurality of reaction gas supply ports at the top of a hollow reactor, an exhaust port at the bottom, a rotating substrate holder for mounting a wafer substrate therein, and a rectifying plate having a plurality of gas holes formed therein. A vapor phase thin film growth apparatus comprising a gas phase grown on a wafer substrate surface on a rotating substrate holder by supplying a reaction gas therein, the vapor phase thin film growing apparatus formed to have a gas flow rate at a central portion and an outer peripheral portion of a reactor, And the inside of the hollow of the reactor has a substantial inner diameter of the upper portion smaller than that of the lower portion, and the upper lower end and the lower upper end are connected by a connecting portion so that the hollow interior is continuous and has a rectifying gas outlet at the connecting portion. The holder is positioned downward with a certain height difference from the upper bottom in the reactor bottom. That the thin film vapor deposition apparatus, and provides a vapor phase thin film growth method using the same apparatus and the like that. The apparatus of the present invention is suitably used in the manufacturing process of the semiconductor wafer substrate which requires high quality, so that the generation of particles in the gas phase in the apparatus furnace and the deposition of precipitates on the furnace wall are small, resulting in a long maintenance cycle of the apparatus. A thin film having a uniform thickness is formed, and there is no gap in resistance, so that a semiconductor wafer substrate can be produced that is homogeneous and has fewer crystal defects.