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Pulsed gas-discharge electron beam sources (optional)

机译:脉冲气体放电电子束源(可选)

摘要

1.the impulse u0433u0430u0437u043eu0440u0430u0437u0440u00a0u0434u043du044bu0439 source electronic beam containing a cathode, on the working surface of which is located u0434u0438u044du043bu0435u043au0442u0440u0438u0447u0435u0441u043au0430u00a0 plate, screen anode, on u043bu0430u0441u0442u044c drift of an electronic beam for u0441u0435u0442u0447u0430u0442u044bu043c anode located in u0433u0430u0437u043eu0440u0430u0437u0440u00a0u0434u043du043eu0439 chamber, and the high-voltage pulse source u043fu0438u0442u0430u043du0438u00a0, connected to the cathode and seth. u0447u0430u0442u043eu043cu0443 anode, u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0 orderwhat screen anode is located directly on the surface of the dielectric plate.;2.the impulse u0433u0430u0437u043eu0440u0430u0437u0440u00a0u0434u043du044bu0439 source electronic beam containing a cathode, on the working surface of which is located u0434u0438u044du043bu0435u043au0442u0440u0438u0447u0435u0441u043au0430u00a0 plate, screen anode, on u043bu0430u0441u0442u044c drift of an electronic beam for u0441u0435u0442u0447u0430u0442u044bu043c anode located in u0433u0430u0437u043eu0440u0430u0437u0440u00a0u0434u043du043eu0439 chamber, and the high-voltage pulse source u043fu0438u0442u0430u043du0438u00a0, u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0, u0441u0435u0442u0447u0430 nuts anode is located directly on the surface of the dielectric plate.in addition, u0433u0430u0437u043eu0440u0430u0437u0440u00a0u0434u043du043eu0439 cell placed an additional electrode, and between the anode and the u0440u0430u0441u0441u0442u043eu00a0u043du0438u0435 u0441u0435u0442u0447u0430u0442u044bu043c additional electrode picking up such that u043du0430u043fu0440u00a0u0436u0435u043du0438u0435 electric u043fu0440u043eu0431u043eu00a0 between them provides a range of working u043du0430u043fu0440u00a0u0436u0435u043du0438u0439 devices and high-voltage pulse source u043fu0438u0442u0430u043du0438u00a0 u043fu043eu0434u043au043bu044eu0447 en to the cathode and the additional u044du043bu0435u043au0442u0440u043eu0434u0443.
机译:1.包含阴极的脉冲 u0433 u0430 u0437 u043e u0440 u0430 u0437 u0440 u00a0 u0434 u043d u044b u0439源电子束包含阴极,其工作表面位于 u0434 u0438 u044d u043b u0435 u043a u0442 u0440 u0438 u0447 u0435 u0441 u043a u0430 u00a0板,屏蔽阳极,位于 u043b u0430 u0441 u0442 u044c上的电子束漂移,用于 u0441 u0435 u0442 u0447 u0430 u0442 u044b u043c阳极位于 u0433 u0430 u0437 u043e u0440 u0430 u0437 u0440 u00a0 u0434 u043d u043d u043e u0439室和高压脉冲源 u043f u0438 u0442 u0430 u043d u0438 u00a0,连接到阴极和seth。 u0447 u0430 u0442 u043e u043c u0443阳极, u043e u0442 u043b u0438 u0447 u0430 u044e u0449 u0438 u0439 u0441 u00100顺序将什么屏蔽阳极直接放置在电介质表面上板; 2.脉冲 u0433 u0430 u0437 u043e u0440 u0430 u0437 u0440 u00a0 u0434 u043d u044b u0439包含阴极的源电子束,其工作表面位于 u0434 u0438 u044d u043b u0435 u043a u0442 u0440 u0438 u0447 u0435 u0441 u043a u0430 u00a0板,丝网阳极,在 u043b u0430 u0441 u0442 u044c u0441 u0435 u0442 u0447 u0430 u0442 u044b u043c阳极位于 u0433 u0430 u0437 u043e u0440 u0430 u0437 u0440 u00a0 u0434 u0434 u043d u043e u0439阳极室和高处电压脉冲源 u043f u0438 u0442 u0430 u043d u0438 u00a0, u043e u0442 u043b u0438 u0447 u0430 u044e u0449 u0438 u0439 u0441 u00a0, u0441 u0435 u0442 u0447 u0430螺母阳极直接位于介电板的表面上。此外, u0433 u0430 u0437 u0 43e u0440 u0430 u0437 u0440 u00a0 u0434 u043d u043e u0439电池在阳极和 u0440 u0430 u0441 u0441 u0442 u043e u043e u00a0 u043d u0438 u0435 u0441 u0435 u0442 u0447 u0430 u0442 u044b u043c额外的电极拾取,使得 u043d u0430 u043f u0440 u00a0 u0436 u0435 u043d u043d u0438 u0435电气 u043f u0440 u043e u0431 u043e u00a0提供了一系列工作范围 u043d u0430 u043f u0440 u00a0 u0436 u0435 u043d u0438 u0439设备和高压脉冲源 u043f u0438 u0442 u0430 u043d u0438 u00a0 u043f u043e u0434 u043a u043b u044e u0447到阴极,以及其他 u044d u043b u0435 u043a u0442 u0440 u043e u0434 u0434 u0443。

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