Radiation-emitting semiconductor chip comprises a brightness adjusting layer arranged consisting of an electrically insulating current blocking region and an electrically conducting current passage region

摘要

Radiation-emitting semiconductor chip (1) comprises a brightness adjusting layer arranged between a connecting region (4) and an active layer and consists of an electrically insulating current blocking region (62) and an electrically conducting current passage region (61) via which the connecting region is electrically connected to a semiconductor layer sequence. A part of the electromagnetic radiation produced in the chip is produced below the connecting region and is absorbed by it. An independent claim is also included for a process for the production of a radiation-emitting semiconductor chip.