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Electrochemical etching process for removing foreign phases on the surface of a chalcopyrite semiconductor in an aqueous electrolyte comprises applying a potential profile to the working electrode in the positive potential region
Electrochemical etching process for removing foreign phases on the surface of a chalcopyrite semiconductor in an aqueous electrolyte comprises applying a potential profile to the working electrode in the positive potential region
Electrochemical etching process for removing foreign phases on the surface of a sulfide-containing chalcopyrite semiconductor in an aqueous electrolyte comprises applying a potential profile determining the potential progression to the working electrode in the positive potential region. The positive or negative displacement speed of the potential between a selected minimum and maximum value opposite the electrode, the temporary length of alternating intervals with a different and constant potential and the number of intervals depending on the foreign phases to be selectively removed can be varied. The aqueous electrolyte is a redox electrolyte with an acidic pH value.
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