首页> 外国专利> Electrochemical etching process for removing foreign phases on the surface of a chalcopyrite semiconductor in an aqueous electrolyte comprises applying a potential profile to the working electrode in the positive potential region

Electrochemical etching process for removing foreign phases on the surface of a chalcopyrite semiconductor in an aqueous electrolyte comprises applying a potential profile to the working electrode in the positive potential region

机译:用于去除水性电解质中的黄铜矿半导体表面上的异相的电化学蚀刻工艺包括在正电势区域中向工作电极施加电势分布

摘要

Electrochemical etching process for removing foreign phases on the surface of a sulfide-containing chalcopyrite semiconductor in an aqueous electrolyte comprises applying a potential profile determining the potential progression to the working electrode in the positive potential region. The positive or negative displacement speed of the potential between a selected minimum and maximum value opposite the electrode, the temporary length of alternating intervals with a different and constant potential and the number of intervals depending on the foreign phases to be selectively removed can be varied. The aqueous electrolyte is a redox electrolyte with an acidic pH value.
机译:用于去除水性电解质中含硫化物的黄铜矿半导体表面上的异相的电化学蚀刻工艺包括在正电势区域中向工作电极施加确定电势进展的电势曲线。可以改变与电极相对的所选最小值和最大值之间的电势的正或负位移速度,具有不同且恒定电势的交替间隔的临时长度以及取决于要选择性去除的异相的间隔数。水性电解质是具有酸性pH值的氧化还原电解质。

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