A method for the improvement of a simulation model of the photolithographic projection

摘要

The present invention relates to a process for improving a photolithographic simulation model of the photolithographic simulation of a pattern formed on a photomask. In this case, starting from a two-dimensional simulation model, the the physically - chemical processes during the lithography taken into account, a frequency-dependent intensity loss is calculated, which by means of multiplication of the simulated intensity distribution in the fourier - space is determined with a filter function. This enables a precise calculation of the intensity distribution in the substrate plane achieve. The method according to the invention, the accuracy of three-dimensional models in the case of a substantially lower machining time. The method according to the invention is suitable in particular for the calculation of opc - structures.