Process for producing deep p regions in silicon irradiates n substrate with high energy particles such that it is converted into a p region of required depth after a given time and temperature

摘要

A process for producing deep p-regions in silicon comprises irradiating n-substrate or n-epitaxial sections of the semiconductor element being made with high-energy particles of such energy that, after a given time and heating temperature the n-region is converted to a p-region to the required depth.