Magnetic random access memory device for computer, has grid of bit and word line which is increased by inclusion of multiple diodes that reduce leakage currents circulating through non-selected ones of magnetic memory cells

摘要

A grid of bit lines (110) and word lines (106,108) selectively accesses data in an array of magnetic memory cells (102) and are increased by the inclusion of multiple diodes (104) that reduce leakage currents circulating through non-selected ones of the magnetic memory cells. Each of the diodes are connected in series with respective magnetic memory cells and between corresponding grid of bit and word lines. An independent claim is also included for method of manufacturing magnetic random access memory (MRAM) device.