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A method for controlling of the turn-off process of a voltage-controlled, gate-turn-off power semiconductors - switch and apparatus for carrying out the method
A method for controlling of the turn-off process of a voltage-controlled, gate-turn-off power semiconductors - switch and apparatus for carrying out the method
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机译:用于控制电压控制的栅极截止功率半导体的截止过程的方法-开关和用于执行该方法的装置
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摘要
A method for controlling a voltage-controlled, gate-turn-off power semiconductors - switch (t1,.., t4) with a reverse - diode (d1,.., d4) and with a voltage clamping circuit (10) in the case of a diodes switching off with the following process steps:a) verifying whether the value of the gate - emitter - voltage (uge) - of the power semiconductor switch (t1,.., t4) is smaller than a threshold value (ugeth) - of the power semiconductor switch s (t1,.., t4) is,b) verifying whether the value of the collector - emitter of - voltage (uce) - of the power semiconductor switch (t1,.., t4) is smaller than a limit value andc) application of an auxiliary voltage (uH) on the mos - control input (g) of the power semiconductors - switch (t1,.. t4) for a predetermined period of time, as soon as the aforementioned conditions a) and b) are fulfilled and a shutoff command (sig = 0) - for the power semiconductor switch (t1,.., t4) is present.
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机译:一种用于控制电压控制的栅极截止功率半导体的方法-带有反向二极管(d1,..,d4)的开关(t1,。,t4)和内部的电压钳位电路(10)二极管通过以下处理步骤关闭的情况:a)验证功率半导体开关的栅极-发射极-电压(u ge Sub>)的值(t1,..,t4)小于功率半导体开关s(t1,.. t4)的阈值(u geth Sub>)-b)验证电压的集电极-发射极-(u ce Sub>)-功率半导体开关(t1,..,t4)小于极限值,并且c)在mos上施加辅助电压(u H Sub>) -功率半导体的控制输入端(g)-满足上述条件a)和b)并在关闭命令(sig = 0)时,在预定的时间段内进行开关(t1,.t4)存在功率半导体开关(t1,.. t4)。
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