首页> 外国专利> Photolithographic process for microelectromechanical system fabrication, involves developing photosensitive resin layer to obtain patterns with inclined flanks relative to normal to substrates principal plane based on deviation angle

Photolithographic process for microelectromechanical system fabrication, involves developing photosensitive resin layer to obtain patterns with inclined flanks relative to normal to substrates principal plane based on deviation angle

机译:用于微机电系统制造的光刻工艺,涉及显影光敏树脂层,以基于偏角获得相对于基板主平面法线倾斜的侧面的图案

摘要

The process involves insolating a photosensitive resin layer (601) through a mask (603) by a light ray beam (602) with a principal direction. The beam traverses an optical system (606) deviating the direction by an angle of preset deviation. The mask is withdrawn. The layer is developed to obtain patterns with inclined flanks with respect to a normal to a principal plane of a substrate (600) according to the deviation angle. The beam is deviated such that the direction has an angle of incidence on the mask relative to a normal to a principal plane of a substrate (600) when the beam penetrates through the mask. An independent claim is also included for a device for producing inclined patterns by photolithography.
机译:该过程包括通过具有主方向的光束(602)通过掩模(603)使光敏树脂层(601)绝缘。光束穿过光学系统(606),该光学系统使方向偏离预设的偏离角度。面罩被撤回。显影该层以获得根据偏离角相对于衬底(600)的主平面的法线具有倾斜的侧面的图案。使光束偏离,使得当光束穿过掩模时,该方向相对于基板(600)的主平面的法线在掩模上具有入射角。还包括用于通过光刻产生倾斜图案的装置的独立权利要求。

著录项

相似文献

  • 专利
  • 外文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号