首页> 外国专利> Photolithography method for fabricating object e.g. integrated circuit, involves subtracting surface energy integration from total energy quantity required for photoengraving process, to find remaining energy quantity

Photolithography method for fabricating object e.g. integrated circuit, involves subtracting surface energy integration from total energy quantity required for photoengraving process, to find remaining energy quantity

机译:用于制造物体的光刻方法,例如集成电路,涉及从光雕刻过程所需的总能量中减去表面能的积分,以找到剩余的能量

摘要

The method involves integrating surface energy of extreme ultraviolet radiation received by an object across a beam hole of chosen width. The integrated energy is subtracted from total energy quantity required for photoengraving process, to find remaining energy quantity. Number of energy quantum that supplies laser sources is calculated to obtain impulse energy quantity. The sources are selected and controlled. An independent claim is also included for a photolithography device.
机译:该方法涉及对物体跨选定宽度的光束孔接收的极紫外辐射的表面能进行积分。从光雕刻过程所需的总能量中减去积分能量,以找到剩余能量。计算提供激光源的能量量子数,以获得脉冲能量。选择并控制源。光刻设备也包括独立权利要求。

著录项

相似文献

  • 专利
  • 外文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号