TUNNEL MAGNETO-RESISTANCE EFFECT ELEMENT, THIN-FILM MAGNETIC HEAD, HEAD GIMBALS ASSEMBLY, MAGNETIC DISK DEVIDE, METHOD FOR MANUFACTURING THE TUNNEL MAGNETO-RESISTANCE EFFECT ELEMENT, AND METHOD AND DEVICE FOR INSPECTION

摘要

PROBLEM TO BE SOLVED: To provide a TMR effect element wherein element resistance is sufficiently reduced and the generation of popping noise is limited.;SOLUTION: The TMR effect element includes a tunnel barrier layer mainly made of a metal oxide and two ferromagnetic layers stacked together by holding the tunnel barrier layer therebetween. This tunnel barrier layer includes many charge sites, and a relation represented by 0(n_s1^-1-n_s2^-1)^-1(_o-)(n)^-10.2 is satisfied where n is a density of many charge sites in the tunnel barrier layer, is a mobility electrons trapped because of many charge sites, n_s1 and n_s2 are densities of tunnel electrons at minimum and maximum element resistance times when signals are read, and ₀ is a mobility of electrons when not trapped.;COPYRIGHT: (C)2007,JPO&INPIT