PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which is equipped with a quantum well active layer where carriers are sufficiently trapped; and which has a high gain, excellent temperature characteristics, a low threshold value, a high output power, and excellent reliability.;SOLUTION: A lower clad layer, a lower optical guide layer, an active layer, an upper optical guide layer, and an upper clad layer are formed on a GaAs substrate for the formation of the semiconductor light emitting device. The above active layer is equipped with a GacIn1-cPdAs1-d (0c1, 0d1) compressive strain quantum well active layer and a GaeIn1-ePfAs1-f (0e1, 0f1) tensile strain barrier layer, an (AlaGa1-a)bIn1-bP (0a1, 0b1) layer having a larger band gap energy than the active layer is used as, at least, a part of either of the lower clad layer and the upper clad layer, and the absolute value of the strain volume of the barrier layer is set larger than that of the quantum well active layer.;COPYRIGHT: (C)2006,JPO&NCIPI
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机译:要解决的问题:提供一种半导体发光器件,其配备有量子阱有源层,其中载流子被充分俘获。具有高增益,出色的温度特性,低阈值,高输出功率和出色的可靠性。;解决方案:下覆层,下光导层,有源层,上光导层和在GaAs衬底上形成上覆层,以形成半导体发光器件。上面的有源层配备有Ga c Sub> In 1-c Sub> P d Sub> As 1-d Sub>(0 e Sub> In 1-e Sub> P f Sub> As 1- f Sub>(0 a Sub> Ga 1-a Sub>) b Sub>具有比有源层大的带隙能量的In 1-b Sub> P(0 展开▼