METHOD FOR WRITING IN MAGNETIC RAM MEMORY CELLS WITH LAMINATED TOGGLE MEMORY CELLS AND SELECTED CELLS

摘要

PROBLEM TO BE SOLVED: To provide toggle memory cells (MRAM) with high selectivity.;SOLUTION: This toggle MRAM has memory stacks arranged in the X-Y flat surface on an MRAM substrate, and each memory stack has multiple toggle memory cells laminated along the Z-axis. Each memory stack is located in an intersection region between two writing lines that intersect perpendicularly. Each cell in the stack is a "toggle" cell, and the magnetic easy axis of its synthetic antiferromagnetic (SAF) free layer is aligned to be unparallel to the X-axis and Y-axis, and it is separated with a predetermined angle space from the easy axis of all other SAF free layers in the stack centering on the Z-axis. Each cell in the stack is magnetically separated from adjacent cells in the stack by a non-magnetic separation layer.;COPYRIGHT: (C)2006,JPO&NCIPI