首页> 外国专利> CUTTING TOOL MADE OF SURFACE COATED CUBIC BORON NITRIDE SINTERED MATERIAL WITH HARD COATING LAYER EXHIBITING EXCELLENT CHIPPING RESISTANCE AND HEAT-RESISTANT PLASTIC DEFORMABILITY IN HIGH-SPEED INTERMITTENT CUTTING OF HIGH HARDNESS STEEL

CUTTING TOOL MADE OF SURFACE COATED CUBIC BORON NITRIDE SINTERED MATERIAL WITH HARD COATING LAYER EXHIBITING EXCELLENT CHIPPING RESISTANCE AND HEAT-RESISTANT PLASTIC DEFORMABILITY IN HIGH-SPEED INTERMITTENT CUTTING OF HIGH HARDNESS STEEL

机译:高硬度钢的高速间歇切削中具有硬涂层的表面涂层的立方氮化硼氮化硼烧结材料的切削工具,具有出色的抗切削性和耐热塑性变形性

摘要

PPROBLEM TO BE SOLVED: To provide a cutting tool made of a surface coated boron nitride sintered material with a hard coating layer exhibiting excellent chipping resistance and heat-resistant plastic deformability. PSOLUTION: The cutting tool comprises the hard coating layer formed on the surface of a tool substrate composed of a cubic boron nitride sintered material. The hard coating layer is composed of (a) a lower layer formed of a compound nitride layer of Ti, Al and Y (yttrium) having the average layer thickness of 0.5-10 μm and satisfying a composition formula: [TiSB1-(X+Z)/SBAlSBX/SBYSBZ/SB]N, wherein X is 0.40-0.60, and Z is 0.005-0.05 at the atomic ratio, and (b) an upper layer formed of a heat-transformed α-type AlSB2/SBOSB3/SBlayer formed by applying heat treatment in a state of forming a titanium oxide layer by vapor deposition in the average thickness of 0.05-1 μm on the surface of an AlSB2/SBOSB3/SBlayer having a κ-type or θ-type crystal structure and the average layer thickness of 0.5-10 μm formed by vapor deposition, to transform the crystal structure of the AlSB2/SBOSB3/SBlayer having the κ-type or θ-type crystal structure, into an α-type crystal structure. PCOPYRIGHT: (C)2006,JPO&NCIPI
机译:

要解决的问题:提供一种由表面涂覆的氮化硼烧结材料制成的切削工具,该切削材料具有表现出优异的耐崩裂性和耐热塑性变形性的硬质涂层。

解决方案:切削工具包括硬质涂层,该硬质涂层形成在由立方氮化硼烧结材料构成的工具基板表面上。硬涂层由(a)由Ti,Al和Y的复合氮化物层(钇)形成的下层组成,该平均氮化物层的平均层厚度为0.5-10μm并且满足组成公式:[Ti <SB > 1-(X + Z) Al X Y Z ] N,其中X为0.40-0.60,Z为0.005-0.05 (b)由在形成二氧化钛的状态下进行热处理而形成的热变形α型Al 2 O 3 层形成的上层。通过气相沉积在具有κ型或θ型的Al 2 O 3 层的表面上的平均厚度为0.05-1μm气相沉积形成的晶体结构和平均层厚度为0.5-10μm,以转变具有κ的Al 2 O 3 层的晶体结构或θ型晶体结构转变成α型晶体结构。

版权:(C)2006,JPO&NCIPI

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