首页> 外国专利> MAGNETIC GARNETT SINGLE CRYSTAL, OPTICAL ELEMENT USING THE SAME AND METHOD FOR MANUFACTURING MAGNETIC GARNETT SINGLE CRYSTAL

MAGNETIC GARNETT SINGLE CRYSTAL, OPTICAL ELEMENT USING THE SAME AND METHOD FOR MANUFACTURING MAGNETIC GARNETT SINGLE CRYSTAL

机译:磁性石榴石单晶,使用其的光学元件以及制造磁性石榴石单晶的方法

摘要

PROBLEM TO BE SOLVED: To provide a magnetic garnett single crystal wherein a lead content is reduced, an optical element using the crystal and a method for manufacturing the magnetic garnett single crystal in respect of the magnetic garnett single crystal grown by a liquid-phase epitaxial (LPE) method, the optical element using the crystal and the method for manufacturing the magnetic garnett single crystal.;SOLUTION: The magnetic garnett single crystal is grown by the liquid-phase epitaxial growth method and expressed by the chemical formula: BixNayPbzM13-x-y-zFe5-wM2wO12 (wherin, M1 is at least one or more kinds of elements selected from among Y, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu and M2 is at least one or more kinds of elements selected from among Ga, Al, In, Ti, Ge, Si and Pt, 0.5x≤2.0, 0y≤0.8, 0≤z0.01, 0.19≤3-x-y-z2.5, and 0≤w≤1.6).;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:为了提供一种铅含量降低的磁性石榴石单晶,使用该晶体的光学元件以及相对于通过液相外延生长的磁性石榴石单晶的制造磁性石榴石单晶的方法(LPE)方法,使用该晶体的光学元件以及制造磁性榴石单晶的方法;解决方案:磁性net榴石单晶通过液相外延生长法生长并用化学式表示:Bi x Na y Pb z M1 3-xyz Fe 5-w M2 w O 12 (其中,M1是选自Y,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb和Y的至少一种或多种元素Lu和M2是选自Ga,Al,In,Ti,Ge,Si和Pt中的至少一种或多种元素,0.5

著录项

  • 公开/公告号JP2006169093A

    专利类型

  • 公开/公告日2006-06-29

    原文格式PDF

  • 申请/专利权人 TDK CORP;

    申请/专利号JP20050286734

  • 发明设计人 OIDO ATSUSHI;

    申请日2005-09-30

  • 分类号C30B29/28;C30B19/04;G02F1/09;H01F10/24;H01F41/28;

  • 国家 JP

  • 入库时间 2022-08-21 21:53:42

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