CONFIGURATION SIMULATION DEVICE, METHOD OF CONFIGURATION SIMULATION, CONFIGURATION SIMULATION PROGRAM AND OXIDATION SIMULATION DEVICE

摘要

PROBLEM TO BE SOLVED: To provide simulation which stably performs oxidation computation even under the condition of oxidation simulation wherein a thin oxide film is produced, and which carrys out the operation normally without generating operation error even when a process with a wafer inserted into a furnace is employed as an input condition under the atmosphere that oxidizing gas is mixed slightly at low temperature.;SOLUTION: The thickness of a single dimension oxide film is operated before carrying out the oxidation computation. When the thickness of the single dimension oxide film obtained by the computation is larger than a first reference film thickness, the operation is advanced to S21 to effect the normal computation of S21-S27. When the thickness of the single dimension oxide film is smaller than the first reference film thickness, and, further, is larger than a second reference film thickness having a value smaller than that of the first reference film thickness, the operation is advanced to S31 to add an oxide film having a thickness same as that of the single dimension oxide film, to the exposed part of silicon. When the single dimension oxide film thickness is smaller than the second reference film thickness, the operation is advanced to S40 to omit the oxidation computation automatically.;COPYRIGHT: (C)2006,JPO&NCIPI