In the infrared ray lighting furnace and retiring

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon dioxide nano-wire that has a stabilized composition and is highly oriented.;SOLUTION: The method for manufacturing a silicon dioxide nano-wire comprises separately arranging a silicon substrate having nickel nano-particles attached thereon and an indium oxide powder in an infrared irradiation heating furnace and in a mixed gas stream of nitrogen gas and ammonia gas and heating the silicon substrate having nickel particles attached thereon at from 900°C or higher to 1,000°C or lower and heating the indium oxide powder at from 650°C or higher to 680 °C or lower.;COPYRIGHT: (C)2005,JPO&NCIPI