首页> 外国专利> POWER SUPPLY WIRING STRUCTURE, SEMICONDUCTOR INTEGRATED CIRCUIT PROVIDED THEREWITH, POWER SUPPLY WIRING METHOD AND SEMICONDUCTOR INTEGRATED CIRCUIT DESIGNING METHOD USING THE METHOD

POWER SUPPLY WIRING STRUCTURE, SEMICONDUCTOR INTEGRATED CIRCUIT PROVIDED THEREWITH, POWER SUPPLY WIRING METHOD AND SEMICONDUCTOR INTEGRATED CIRCUIT DESIGNING METHOD USING THE METHOD

机译:电源接线结构,由此提供的半导体集成电路,电源接线方法以及使用该方法的半导体集成电路设计方法

摘要

PROBLEM TO BE SOLVED: To provide a power supply wiring structure which can restrain generation of electromigration.;SOLUTION: The power supply wiring structure is provided with a first power supply wiring 1010 and a second power supply wiring 1030 which are wiring layers different with each other. Both power supply sets of wiring 1010 and 1030 are electrically connected through a via 1060 in the crossing regions thereof. A third power supply wiring 1070 is constituted by extending the second power supply wiring 1030 in the wiring direction 1020 of the first power supply wiring 1010 from the crossing regions. Moreover, the first and third power supply sets of wiring 1010, 1070 are electrically connected with the via 1060.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:提供一种能够抑制电迁移的产生的电源布线结构;解决方案:该电源布线结构具有第一电源布线1010和第二电源布线1030,它们的布线层彼此不同。其他。布线1010和1030的两个电源组在其交叉区域中通过通孔1060电连接。第三电源配线1070通过从交叉区域沿第一电源配线1010的配线方向1020延伸第二电源配线1030而构成。此外,布线的第一和第三电源组1010、1070与过孔1060电连接。版权所有:(C)2006,JPO&NCIPI

著录项

  • 公开/公告号JP2006041016A

    专利类型

  • 公开/公告日2006-02-09

    原文格式PDF

  • 申请/专利权人 MATSUSHITA ELECTRIC IND CO LTD;

    申请/专利号JP20040215606

  • 发明设计人 TAKAHATA ATSUSHI;

    申请日2004-07-23

  • 分类号H01L21/82;H01L21/3205;H01L23/52;

  • 国家 JP

  • 入库时间 2022-08-21 21:51:06

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