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The steam passing by the Czochralski (VCZ) monocrystal growth device

机译:通过Czochralski(VCZ)单晶生长装置的蒸汽

摘要

PROBLEM TO BE SOLVED: To provide an apparatus for growing a single crystal by a vapor pressure controlled Czochralski(VCZ) method, which has a heat wall sealing vessel which can be opened even when it is hot and which is used repeatedly.;SOLUTION: The VCZ single crystal growing apparatus has a single crystal furnace, a heating unit, a mechanical transmission unit, a gas control unit, a heat wall sealing vessel 2 provided in the single crystal furnace, a crucible 6 placed in the heat wall sealing vessel 2, a crucible transmission shaft 7 and a seed shaft 8 each being inserted into the heat wall sealing vessel 2 through sealing devices 9, 10. Further, the heat wall sealing vessel 2 mentioned above has an upper vessel part 3 and a lower vessel part 4, and a connection device 5 for sealing is interposed between the upper vessel part 3 and the lower vessel part 4.;COPYRIGHT: (C)2002,JPO
机译:解决的问题:提供一种通过蒸气压控制的切克劳斯基(VCZ)方法生长单晶的装置,该装置具有热壁密封容器,即使热时也可以打开,并且可以重复使用。 VCZ单晶生长设备具有单晶炉,加热单元,机械传动单元,气体控制单元,设置在单晶炉中的热壁密封容器2,放置在热壁密封容器2中的坩埚6。坩埚传动轴7和种子轴8分别通过密封装置9、10插入热壁密封容器2中。此外,上述热壁密封容器2具有上部容器部3和下部容器部4。 ,在上部容器部3和下部容器部4之间插入有用于密封的连接装置5。版权所有:(C)2002,JPO

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