Cat-PECVD method, the film formed by using the same thin film device with the membrane, and membrane processing system

摘要

PROBLEM TO BE SOLVED: To provide a Cat-PECVD method through which a film having high quality and high uniformity in film thickness and film quality through a large area can be quickly formed with high productivity, and to provide a film formed through the above method, a thin film device using the film, and a film processing system.;SOLUTION: This Cat-plasma enhanced chemical vapor deposition (PECVD) method is a method in which material gases including gas which contains Si and/or C in its molecular formula, and non-Si/non-C gases which are heated by a thermal catalyst provided in a gas introduction path and composed of gases that contain no Si and no C, are jetted out into a film forming space as kept separate from each other from a plurality of gas exhaust nozzles, passing through the hollow part of an antenna electrode which is provided in the film forming space and equipped with the hollow part. The gases jetted into the film forming space and mixed together are decomposed and activated by plasma produced with the antenna electrode connected to a high-frequency power supply so as to deposit the film on a substrate which is arranged as confronting the antenna electrode. The antenna electrode is equipped with a cooling mechanism.;COPYRIGHT: (C)2004,JPO