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Base bias circuit and a power amplifier using the base bias circuit

机译:基极偏置电路和使用该基极偏置电路的功率放大器

摘要

PROBLEM TO BE SOLVED: To provide a base bias supply, circuit for power bipolar transistor(TR) small in chip area, small in consumed current and capable of unnecessitating a choke inductor between a base of the power TR and the bias supply circuit, and to provide an amplifier circuit using the base bias supply circuit.;SOLUTION: The base bias circuit 1 acts nearly like a constant voltage source, is configured such that its generating base bias voltage is not susceptible to the effect of a power supply voltage and an ambient temperature, and has a function of controlling the base bias voltage in response to an external control signal. Properly selecting the resistance of resistors 6, 14 downsizes each bipolar TR being a component of the bias circuit 1 to reduce a current consumed by the bias circuit 1 and to eliminate the need for an RF choke inductor between the power TR 13 and the bias circuit 1. That is, the chip is downsized and number of externally mounted components is decreased to reduce the cost.;COPYRIGHT: (C)2002,JPO
机译:要解决的问题:提供一种基极偏置电源,一种功率双极晶体管(TR)的电路,该电路的芯片面积小,消耗的电流小并且能够在电源TR的基极和偏置电源电路之间不需要扼流电感,解决方案:基极偏置电路1的作用几乎类似于恒压源,其配置使其产生的基极偏置电压不受电源电压和电压的影响。并具有响应于外部控制信号来控制基极偏置电压的功能。适当地选择电阻器6、14的电阻可以减小作为偏置电路1组成部分的每个双极TR的尺寸,以减小偏置电路1消耗的电流,并消除在功率TR 13和偏置电路之间使用RF扼流电感的需要。 1.即缩小芯片尺寸并减少外部安装的组件数量以降低成本。;版权所有:(C)2002,JPO

著录项

  • 公开/公告号JP3770306B2

    专利类型

  • 公开/公告日2006-04-26

    原文格式PDF

  • 申请/专利权人 日本電気株式会社;

    申请/专利号JP20000183999

  • 发明设计人 松野 典朗;平山 知央;

    申请日2000-06-20

  • 分类号H03F3/213;H03F1/02;H03F3/195;

  • 国家 JP

  • 入库时间 2022-08-21 21:49:41

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