Simulation method, a simulator, a recording medium, the pattern design method that stores a simulation program, the pattern design system, a recording medium storing the pattern design program, and a manufacturing method of a semiconductor device

摘要

PROBLEM TO BE SOLVED: To provide a process simulation method by which the damage given by charged particles can be detected and evaluated efficiently at the time of manufacturing a semiconductor device and a guide can be given to pattern designs. ;SOLUTION: A simulation method includes a step of dividing a manufacturing process for exposing a sample to be worked to charged particles into a plurality of time steps (S15), a step of calculating at least one of the current density of a tunnel current flowing through an insulating film on the surface of the sample, the charged trap density in the insulating film, and the interface state density of the insulating film at every time step (S16), and a step of calculating the shape change of the sample due to the manufacturing process in which the sample is exposed to the charged particles (S17).;COPYRIGHT: (C)2000,JPO