The lanthanum complex and the lanthanum complex production mannered null below-mentioned formula

摘要

PROBLEM TO BE SOLVED: To provide a lanthanum complex having high vapor pressure, excellent properties for vacuum deposition and high solubility to organic solvent; and to provide a method of MOCVD (Metal Organic Chemical Vapor Deposition) forming a BLT (Bismuth Lanthanum Titanate) film in a mild condition using the lanthanum complex.;SOLUTION: The lanthanum complex expressed by general formula (I) is obtained by reacting a La(tmhd)₃ (lanthanum tetramethylheptane dionate) and pentamethyldiethylene triamine (PMDT) or triethoxytriethylne amine (TETEA) at room temperature in an organic solvent such as hexane. (In the formula, A is PMDT or TETEA.). And the method of MOCVD for forming the BLT film using the lanthanum complex as a lanthanum precursor and a Ti precursor expressed by general formula (II) and an organic bismuth precursor. (In the formula m is an integer of 2-5.).;COPYRIGHT: (C)2003,JPO