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Mutations of voltage-gated ion channnels that allow them to express a voltage-independent phenotype and an improved method to use the same
Mutations of voltage-gated ion channnels that allow them to express a voltage-independent phenotype and an improved method to use the same
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机译:电压门控离子通道的突变,使其能够表达与电压无关的表型,以及使用该通道的改进方法
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摘要
The subject invention includes mutant voltage-gated ion channels that are open over a wide range of potential differences across membranes. The present invention also includes methods of use such mutant voltage-gated ion channels in cells with highly negative potential differences across their membranes. One preferred mutant voltage-gated ion channel is a channel with a mutation at the residue homologous to P513 in Kv1.5 and at least one mutation at one of the residues homologous to R400, R403, and R409 in Kv1.5.
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