首页> 外国专利> Mutations of voltage-gated ion channnels that allow them to express a voltage-independent phenotype and an improved method to use the same

Mutations of voltage-gated ion channnels that allow them to express a voltage-independent phenotype and an improved method to use the same

机译:电压门控离子通道的突变,使其能够表达与电压无关的表型,以及使用该通道的改进方法

摘要

The subject invention includes mutant voltage-gated ion channels that are open over a wide range of potential differences across membranes. The present invention also includes methods of use such mutant voltage-gated ion channels in cells with highly negative potential differences across their membranes. One preferred mutant voltage-gated ion channel is a channel with a mutation at the residue homologous to P513 in Kv1.5 and at least one mutation at one of the residues homologous to R400, R403, and R409 in Kv1.5.
机译:本发明包括突变的电压门控离子通道,其在跨膜的很大的电势差范围内是开放的。本发明还包括在细胞膜上具有高度负电势差的细胞中使用这种突变电压门控离子通道的方法。一种优选的突变电压门控离子通道是在Kv1.5中与P513同源的残基处具有突变并且在Kv1.5中与R400,R403和R409同源的残基之一处具有至少一个突变的通道。

著录项

  • 公开/公告号US2006167226A1

    专利类型

  • 公开/公告日2006-07-27

    原文格式PDF

  • 申请/专利权人 DAVID FEDIDA;DAVID STEELE;

    申请/专利号US20050520780

  • 发明设计人 DAVID FEDIDA;DAVID STEELE;

    申请日2003-07-14

  • 分类号C07K14/705;C07H21/04;C12P21/06;C12N15/74;C12N1/18;

  • 国家 US

  • 入库时间 2022-08-21 21:47:09

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