Multi-sensing level MRAM structures

摘要

A memory cell including a switching element having a source and a drain, a first magnetic tunnel junction (MTJ) device, and a second MTJ device. The first MTJ device has a first tunneling junction resistance and is coupled to a first one of the switching element source and drain. The second MTJ device has a second tunneling junction resistance and is coupled to a second one of the switching element source and drain. The second resistance is substantially less than the first resistance.