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Method of forming a LP-CVD oxide film without oxidizing an underlying metal film
Method of forming a LP-CVD oxide film without oxidizing an underlying metal film
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机译:在不氧化下面的金属膜的情况下形成lp-CVD氧化膜的方法
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摘要
A method of manufacturing a semiconductor device includes forming a LP-CVD oxide film on sides of a gate including a metal film by means of a LP-CVD method that does not cause oxidization of the metal film. Oxidization of a metal film can be prevented physically, and degradation of the electrical device characteristics can be prevented.
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