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PINNED PHOTODIODE SENSOR WITH GATE-CONTROLLED SILICON-CONTROLLED RECTIFIER TRANSFER SWITCH AND METHOD OF FORMATION
PINNED PHOTODIODE SENSOR WITH GATE-CONTROLLED SILICON-CONTROLLED RECTIFIER TRANSFER SWITCH AND METHOD OF FORMATION
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机译:栅极控制的硅控制整流器转换开关的固定式光电二极管传感器及其形成方法
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摘要
A pinned photodiode sensor with gate-controlled SCR switch includes a pinned photodiode and a gate-controlled SCR switch. The SCR switch includes a P-type substrate, an N− doped region, and an N+ doped region formed on the substrate; a P+ doped region formed on the N− doped region; an oxide layer formed on the P substrate, the N− doped region, the N+ doped region, and the P+ doped region; and a gate formed above the P substrate and the N− doped region. The gate includes a P+ doped region and an N+ doped region. During an exposure procedure, a depletion region will not reach the interface between the oxide layer and the substrate, thereby preventing dark current leakage.
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