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Method of making semiconductor device including a first set of windows in a mask with larger ratio of surface area than a second set of windows
Method of making semiconductor device including a first set of windows in a mask with larger ratio of surface area than a second set of windows
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机译:制造半导体器件的方法,该半导体器件包括在掩模中具有比第二组窗口大的表面积比的第一组窗口
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摘要
A method of creating two or more semiconductor elements of different characteristics in one and the same semiconductor substrate. Two antimony-diffused regions are formed in a p-type semiconductor region (of a semiconductor substrate for providing embedded layers for two field-effect transistors of unlike characteristics. Then the substrate is overlaid with a mask bearing two different patterns of windows. Then phosphor is introduced into the substrate through the mask windows to create phosphor-diffused regions in overlying relationship to the antimony-diffused regions. The two window patterns of the mask are such that the two phosphor-diffused regions differ in mean phosphor concentration. The embedded layers for the two FETs are obtained as an n-type epitaxial layer is subsequently formed on the p-type semiconductor region in which have been created the antimony-diffused regions and phosphor-diffused regions.
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