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Method and structure of electric field poling of Ti indiffused LiNbO3 substrates without the use of grinding process
Method and structure of electric field poling of Ti indiffused LiNbO3 substrates without the use of grinding process
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机译:Ti扩散LiNbO3基体不进行磨削的电场极化方法及结构
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摘要
A method and structure are disclosed with a simplified approach for fabricating a LiNbO3 wafer with Ti indiffusion wafeguide on the surface that is domain inverted. The method involves indiffusing Ti into LiNbO3 with a predefined temperature and time indiffusion range, a Li enriched and dry oxygen atmosphere, which allows making optical waveguides on the z− crystal face without any significant domain inversion occurring on the z+ face of the crystal. This allows for subsequent poling without the need of any additional removal of the thin domain inverted layer which would otherwise appear on the z+ face. Even in instance where a thin domain inversion layer is formed, it is insufficient thick to prevent poling, eliminating the need for the grinding process.
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