首页> 外国专利> Integrated circuit memory devices reducing propagation delay differences between signals transmitted to separate spaced-apart memory blocks therein

Integrated circuit memory devices reducing propagation delay differences between signals transmitted to separate spaced-apart memory blocks therein

机译:集成电路存储装置减小了传输到其中的分开的间隔存储块的信号之间的传播延迟差异

摘要

Integrated circuit memory devices can include a plurality of conductor paths that are electrically coupled to all memory blocks included in separate memory arrays of the device and are configured for access together during a read or write operation. All of the conductor paths are configured to reduce differences in propagation delays of signals conducted thereon.
机译:集成电路存储器设备可以包括多个导体路径,其电耦合到该设备的单独存储器阵列中包括的所有存储器块,并且被配置为在读取或写入操作期间一起访问。所有导体路径被配置为减小在其上传导的信号的传播延迟的差异。

著录项

  • 公开/公告号US7110276B2

    专利类型

  • 公开/公告日2006-09-19

    原文格式PDF

  • 申请/专利权人 MIN-SANG PARK;

    申请/专利号US20040855121

  • 发明设计人 MIN-SANG PARK;

    申请日2004-05-27

  • 分类号G11C5/06;

  • 国家 US

  • 入库时间 2022-08-21 21:43:43

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