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Magnetoresistive head using multilayered varistor material

机译:使用多层压敏电阻材料的磁阻磁头

摘要

A magnetoresistive includes a magnetoresistive layer which converts magnetic signals to electric signals and a pair of electrodes for allowing an electrically sensing current to flow across the magnetoresistive layer is made between an upper shield and an under shield with upper gap layer and under gap layer intervening between the magnetoresistive layer and the shields. By using a multi-layered varistor film or films of a material such as ZnO, SiC, SrTiO, Si etc. in combination with an insulating material SiO2, A1203, etc. to connect the magnetoresistive element to the shields and interconnect both electrodes, a magnetoresistive head which withstands breakdown even if the insulating gap layers are made thinner is provided.
机译:磁阻包括:磁阻层,其将磁信号转换为电信号;以及一对电极,用于在上部屏蔽层和下部屏蔽层之间形成用于使电感测电流流过磁阻层的电极,其中上部间隙层与下部间隙层之间磁阻层和屏蔽层。通过使用多层压敏电阻膜或诸如ZnO,SiC,SrTiO,Si等材料的膜与绝缘材料SiO2,A1203等相结合,将磁阻元件连接到屏蔽层并互连两个电极,提供即使绝缘间隙层变薄也能够耐击穿的磁阻头。

著录项

  • 公开/公告号US7061727B2

    专利类型

  • 公开/公告日2006-06-13

    原文格式PDF

  • 申请/专利权人 KATSUMI HOSHINO;HIROYUKI HOSHIYA;

    申请/专利号US20010940517

  • 发明设计人 KATSUMI HOSHINO;HIROYUKI HOSHIYA;

    申请日2001-08-29

  • 分类号G11B5/31;G11B5/39;

  • 国家 US

  • 入库时间 2022-08-21 21:43:45

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