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Method for adapting structure dimensions during the photolithographic projection of a pattern of structure elements onto a semiconductor wafer
Method for adapting structure dimensions during the photolithographic projection of a pattern of structure elements onto a semiconductor wafer
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机译:在将结构元件的图案光刻投影到半导体晶片上的过程中调整结构尺寸的方法
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摘要
The invention relates to a method for adapting structure dimensions during the photolithographic projection of a pattern of structure elements onto a semiconductor wafer. An exposure device (5) is provided, which can emit light in two polarization planes (32; 34). Through the choice of the degree of polarization, i.e., the ratio of the intensity in the first polarization plane (32) to the intensity in the second polarization plane (34), it is possible to alter the ratio of width (40) to length (42) of the resist structure (36) formed on the resist layer (14). A variation of approximately 30% with respect to dimensionally accurate imaging can thus be achieved in a simple manner.
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