首页> 外国专利> Optical waveguide circuit including passive optical waveguide device combined with active optical waveguide device, and method for making same

Optical waveguide circuit including passive optical waveguide device combined with active optical waveguide device, and method for making same

机译:包括与有源光波导装置结合的无源光波导装置的光波导电路及其制造方法

摘要

An optical waveguide device includes an active optical waveguide device and a passive optical waveguide device. The active optical waveguide device is formed at least in part on a semiconductor layer and includes an electrode portion. A region of altered effective mode index is created by the active optical waveguide device and controlled by application of an electric voltage to the electrode portion in a manner that alters a free carrier density of the region of altered effective mode index. Changing the electric voltage to the electrode portion changes the effective mode index in the region of altered effective mode index. The passive optical waveguide device is formed at least in part from a polysilicon layer deposited on the semiconductor layer. An effective mode index of a region of static effective mode index within the optical waveguide is created by the polysilicon layer of the passive optical waveguide device. The value and position of the effective mode index within the region of static effective mode index remains substantially unchanged over time. The optical waveguide couples the active optical waveguide device and the passive optical waveguide device, and the optical waveguide is formed at least in part using the semiconductor layer.
机译:光波导装置包括有源光波导装置和无源光波导装置。有源光波导装置至少部分地形成在半导体层上并且包括电极部分。改变的有效模式指数的区域由有源光波导装置产生,并且通过以改变改变的有效模式指数的区域的自由载流子密度的方式通过向电极部分施加电压来控制。改变电极部分的电压在改变的有效模式指数的区域中改变有效模式指数。无源光波导装置至少部分地由沉积在半导体层上的多晶硅层形成。光波导内的静态有效模式指标的区域的有效模式指标由无源光波导装置的多晶硅层产生。静态有效模式索引范围内的有效模式索引的值和位置随时间基本上保持不变。光波导耦合有源光波导器件和无源光波导器件,并且光波导至少部分地使用半导体层形成。

著录项

  • 公开/公告号US6993243B2

    专利类型

  • 公开/公告日2006-01-31

    原文格式PDF

  • 申请/专利权人 SHRENIK DELWALA;

    申请/专利号US20040007680

  • 发明设计人 SHRENIK DELWALA;

    申请日2004-12-08

  • 分类号G02B6/00;

  • 国家 US

  • 入库时间 2022-08-21 21:41:06

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