METHOD FOR CULTIVATION OF MULTILAYERED SEMI-CONDUCTOR HETEROSTRUCTURES BY THE METHOD OF LIQUID EPITAXIA OF COMBINATIONS OF amp;ldquo;UNLIMITEDamp;rdquo; AND amp;ldquo;LIMITEDamp;rdquo; SOLUTION-FLUX VOLUMES

摘要

A method provides using the solution-flux containing donor and acceptor impurities, and effecting sharp change of flux volume, available on a substrate with grown up first epitaxial p-(or n-) layer, thus, after receiving the first epitaxial layer from “unlimited” volume p-(or n-) of the solution-flux cultivation of active area during certain time is effected by restriction of volume of the first p-(or n-) solution-flux, which is characterized by a gradient of concentration of the basic components, after which on this layer of the limited volume the oncome of “unlimited” volume n-(or p-) solution-flux is effected.