首页> 外国专利> SCATTEROMETRY ALIGNMENT FOR IMPRINT LITHOGRAPHY

SCATTEROMETRY ALIGNMENT FOR IMPRINT LITHOGRAPHY

机译:光刻技术的比对校准

摘要

Described are methods for patterning a substrate by imprint lithography. Imprint lithography is a process in which a liquid is dispensed onto a substrate. A template is brought into contact with the liquid and the liquid is cured. The cured liquid includes an imprint of any patterns formed in the template. Alignment of the template with a previously formed layer on a substrate, in one embodiment, is accomplished by using scatterometry.
机译:描述了通过压印光刻对基板进行图案化的方法。压印光刻是将液体分配到基板上的过程。使模板与液体接触,并使液体固化。固化的液体包括在模板中形成的任何图案的印记。在一个实施例中,通过使用散射测量法将模板与基板上先前形成的层对准。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号