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INTEGRATED WAVELENGTH TUNABLE SINGLE AND TWO-STAGE ALL-OPTICAL WAVELENGTH CONVERTER

机译:集成波长可调单级和两级全光波长转换器

摘要

A semiconductor tunable laser (10) and an interferometer (12) coupled to the tunable laser (10) are monolithically fabricated in a semiconductor heterostructure. The laser also comprises a buried ridge stripe waveguide laser. The interferometer (12) has a semiconductor optical amplifier (38) coupled in each arm. A cross-gain semiconductor optical amplifier converter is coupled to the interferometer (12). The semiconductor optical amplifier (38) coupled in each arm is biased so that an optical path length difference between the two arms is in antiphase which results in destructive interference. The output of the tunable laser (10) is coupled to a coupler. A semiconductor optical amplifier (38) is used as a gain controller for the semiconductor optical amplifiers in the interferometer (12) to allow wavelength conversion over a larger range of input signal powers. The heterostructure substrate comprises a low bandgap waveguide layer and thinner multi-quantum well active regions disposed above the low bandgap waveguide layer. The heterostructure substrate has nonabsorbing passive elements formed therein by selectively removing the quantum wells regions above the waveguide layer to allow formation of active and passive sections in the waveguide layer without having to perform a butt joint regrowth. The invention is also characterized as a method of fabricating an integrated optical device as disclosed above in the heterostructure substrate.
机译:半导体可调谐激光器(10)和耦合至可调谐激光器(10)的干涉仪(12)被单片地制造在半导体异质结构中。该激光器还包括掩埋的脊条纹波导激光器。干涉仪(12)具有耦合在每个臂中的半导体光放大器(38)。交叉增益半导体光放大器转换器耦合到干涉仪(12)。偏置在每个臂中的半导体光放大器(38)被偏置,使得两个臂之间的光程长度差反相,这导致相消干涉。可调激光器(10)的输出耦合到耦合器。半导体光放大器(38)用作干涉仪(12)中的半导体光放大器的增益控制器,以允许在较大范围的输入信号功率上进行波长转换。异质结构衬底包括低带隙波导层和设置在低带隙波导层上方的较薄的多量子阱有源区。异质结构衬底具有通过选择性地去除波导层上方的量子阱区域而在其中形成的非吸收性无源元件,从而允许在波导层中形成有源部分和无源部分而不必执行对接再生长。本发明的特征还在于在异质结构衬底中制造如上所述的集成光学器件的方法。

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