CHEMICAL VAPOR DEPOSITION WITH NUCLEOPHILIC STABLE CARBENE-CONTAINING PRECURSORS

摘要

Novel main-group and transition-metal chemical vapor deposition precursors which incorporate nucleophilic stable carbene ligands for forming doped or undoped metal, metal oxide, and metal-nitride films are described. The coordination of nucleophilic stable carbene ligands to main-group and transition-metal fragments allows control over the molecular architecture of the precursor and the resultant ability to modify and control precursor physical characteristics.