A RESONANT TUNNELING EFFECT TRANSISTOR WITH DOUBLE BARRIER TUNNEL JUNCTION

摘要

The present invention relates to a resonant tunneling effect transistor, which is based upon double barrier tunnel junction. It is composed of a substrate, an emitter, a base, a collector, a first tunnel barrier layer and a second tunnel barrier layer; Wherein the first tunnel barrier layer is located between an emitter and a base, the second tunnel barrier layer is located between a base and a collector, besides the junction areas of the tunnel junction which is formed between emitter/collector and base are 1 µ m2∼10000 µ m2; The thickness of base is similar to the electron average free-range of material of layer itself ; The direction of magnetic intensity is unbound in the only one pole of emitter, base and collector . Because the double barrier structure is used, it overcomes the Shottky potential which is brought between base and collector. Wherein the base current is modulating signal, the collector signal is similar to base current's modulating mode by changing the direction of magnetic intensity of base/collector, i.e. producing the resonant tunneling effect, it can obtain an amplification signal under the suitable conditions.